Ciclo de Seminarios 2015
2015 26 MAR
Jueves 26 de Marzo
10:30 hs. - Auditorio Emma Pérez Ferreira
Edificio TANDAR
"Epitaxial Growth of Semiconductors by Metalorganic Vapor Phase Epitaxy"
André Strittmatter
(*)
Department of Semiconductor Epitaxy, Institute of Experimental Physics, Otto-von-Guericke Universität, Germany
RESUMEN:
A brief introduction into semiconductor epitaxy is presented - from fundamentals like the Kossel
crystal and strain-related growth modes to specifics aspects like GaAs-based and nitride-based
heterostructures. Metalorganic vapor phase epitaxy as the dominant technique for growing epitaxial
structures for semiconductor device fabrication will be highlighted. I will also illustrate how
epitaxial growth of very thin layers can be mastered with the right combination of in-situ and
ex-situ characterization tools. A few examples of failure analysis of epitaxial growth processes
will be demonstrated.
* A.Strittmatter studied physics and received his diploma degree from Technical University of Berlin in 1996. At the same place, he received in 2002 the doctoral degree in natural sciences (Dr. rer. nat.) and in 2012 habilitation degree in experimental physics. During his career, he worked on epitaxial growth of III/V-related semiconductor materials by MOVPE including phosphides, arsenides, and nitrides for optoelectronic devices such as lasers, LEDs, photodetectors. From 2008-2010 A.S. joined the electronic materials device laboratory at the Palo Alto Research Center (PARC, CA) for work on semi-polar GaN-based green lasers and novel nitride lasers. Another main topic is growth of single quantum dot structures for device applications such as single photon emitters. A.S. authored more than 90 journal and conference publications and more than 10 patents. Since April 2014 he is with the Institute of Experimental Physics at the University of Magdeburg as interim head of the group for semiconductor epitaxy (former head Prof. A. Krost).
