RESUMEN: The metalorganic chemical vapour deposition (MOCVD) process for electronic and photonic compound semiconductor materials and devices is reviewed. We consider the basic MOCVD chemical reaction process, growth mechanisms, including hydrodynamics, boundary-layer issues, thermal effects, and pyrolysis reactions. Finally criteria for growth regimes, growth rate, and alloy composition are described. Few examples of material characterization from the structural and doping behaviour are presented.