Amorphous carbon multilayered films have been studied by molecular dynamic simulations. Samples were grown on diamond and silicon substrates, alternating deposition energies of 1 and 40 eV; atomic interactions were described by the semiemperical Tersoff potential. Structural analysis of the obtained films shows that the film density and sp³/sp² ratio oscillate with deposition energy. The alternation of layers with different local atomic stresses is also observed. High density sp³-rich profiles and compressive stress are associated with high deposition energy regions, whereas low density sp³ poor profiles and tensile stress are associated with low deposition energy ones. The grown films are thermally stable in the bulk under simulated annealing at 2500 K; appreciable changes, similar to those observed in monolayer films, occur mainly on the last superficial layer.