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En las fronteras de la Materia Condensada

Workshop dedicado a Mariana Weissmann


Resumenes de las Presentaciones Murales


A New method to Characterize the Electrical Degradation of Monocrystalline Silicon solar Cells by Space Protons

Martin Alurralde
U.A. Materiales-CAC-CNEA, Avda del Libertador 8250 (1429) Buenos Aires, Argentina

Abstract

In this work it is presented a new method to calculate the equivalent dose for orbits where the majority of damage is due to protons. The method compares the primary knock on atom distribution and depth dependence, between irradiation of space proton distribution and laboratory irradiation of silicon solar cells, as is obtained from simulations using SRIM code. It is show that for obtaining right depth damage distribution for a solar cell covered by a glass in space, it is necessary to irradiate the cell from backside with a proton energy related to glass thickness. The new method is applied to predict the electrical degradation of a silicon solar cell in a low altitude orbit, and is it compared with predictions of the so call JPL method.

 
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