We report on the growth and characterization of non-epitaxial but (100)-highly textured BaBiO₃ thin films on silicon substrates. We have found the deposition conditions that optimize the texture, and show that the textured growth is favoured by the formation of a BaO layer at the first growth stages. X-ray diffraction Φ-scans, together with the observation that the same textured growth is found on films grown on Pt and SiO₂ buffered Si, demonstrate the absence of epitaxy. Finally, we have shown that our (100)-oriented BaBiO₃ films can be used as suitable buffers for the growth of textured heterostructures on silicon, which could facilitate the integration of potential devices with standard electronics.