Página Inicial CNEA Laboratorio TANDAR Página Inicial TANDAR Historia del acelerador TANDAR Web interno Web mail
Inicio » Actividades I+D > Publicaciones 2011 > Diamond Deposited by a Direct Current Ho...
capítulo de libro
"Diamond Deposited by a Direct Current Hot Cathode Plasma Discharge: Characterization and Applications"
M. Reinoso, F. Alvarez, E.B. Halac and H. Huck
Capítulo 6 del libro "Diamonds: Properties, Synthesis and Applications", Ed. T. Eisenberg and E. Schreiner, Earth Sciences in the 21st Century, Nova Science Publishers, Inc. (2011), 227 pp
ISBN: 978-1-61470-591-8
A diamond deposition process is introduced and discussed together with its applications to several substrates. Diamond films are deposited by a direct current plasma discharge, assisted by electron emission from a hot cathode consisting of one or more tungsten filaments. This method allows good quality diamond film growth at a rate of up to 10 m h-1 over a relatively large area (8 cm2). This deposition method is evaluated on different substrates (diamond, silicon, steels and alumina). Several surface pre-treatments are employed for each substrate: silicon diffusion, silicon interlayers, diamond seeding, and surface scratching using diamond and SiC powder. The results are described and analyzed in detail in each case. Deposited diamonds are characterized by Raman spectroscopy, electron microscopy (SEM), energy dispersive spectroscopy (EDS), and X-ray diffraction (XRD). Potential applications are described below.
Av. Gral Paz y Constituyentes, San Martín, Pcia. de Buenos Aires, Argentina
Tel: (54-11) 6772-7007 - Fax: (54-11) 6772-7121