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"Model and Fitting Results for the Filamentary Conduction in MIM Resistive Switching Devices"
F. Palumbo, E. Miranda, G. Ghibaudo and V. Jousseaume
Proc. of the "26th Symposium on Microelectronics Technology and Devices" (SBMicro 2011), João Pessoa, Brazil, August 30-September 2, 2011. Ed. M. Pavanello, R. Freire, J. Naviner, O. Bonnaud
ECS Trans. 39(1) (2011) 187-193
Experimental results for the resistive switching effect occurring in Pt/HfO2/Pt devices are analyzed within the framework of the twoterminal Landauer theory for mesoscopic conducting systems. It is shown that the magnitude of the current and the voltage dependence of the switching conduction characteristic are mainly dictated by the size of the filamentary path generated after electroforming. The temperature dependence of the high resistance conduction characteristics is also modeled in a consistent manner with the proposed picture.
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