artículo con referato
"Mechanism for bipolar resistive switching in transition-metal oxides"
M.J. Rozenberg, M.J. Sánchez, R. Weht, C. Acha, F. Gomez-Marlasca and P. Levy
Phys. Rev. B 81(11) (2010) 115101/1-5
Abstract
We introduce a model that accounts for the bipolar resistive switching phenomenon observed in transition-metal oxides. It qualitatively describes the electric-field-enhanced migration of oxygen vacancies at the nanoscale. The numerical study of the model predicts that strong electric fields develop in the highly resistive dielectric-electrode interfaces leading to spatially inhomogeneous oxygen vacancies distribution and a concomitant resistive switching effect. The theoretical results qualitatively reproduce nontrivial resistance hysteresis experiments that we also report providing key validation to our model.
DEPARTAMENTO FISICA DE LA MATERIA CONDENSADA